The breakdown processes of the flute-type hollow cathode discharge was observed by a low-light level TV eamera of the SEM (Silicon Electron Multiplication) type, the most sensitive one of low-light level cameras of modern industry. An explantion for the mechanism of light developmen was presented. The light development was divided into two stages, i.e., the stage (1st stage) of self-sustained dark discharge developed in the space between the anode bar and the outer-side of the flute tube, and the stage (2nd stage) of entering of dischage through the hole into the flute tube. corresponding to the two stages, there are two γ-processes, one existing at the metal surface around the hble and the other at the inner surface of the cathode. According to the above results, a discussion on the current principle of the design of geometrical parameters of the flute type was given.

Stating from the kinetic theory, the signifieance of eigenline integral is discussed. The effect of the equilibrium distribution function f₀ on analytic results is fully investigated. In ease of the interaction between TE_mn field in a circular waveguide and a single-momentum ring-shaped electron beam, the dispersion equation is strictly derived in the waveguide coordinate system. In the meantime, some critical review of previous papers are made.

The moment method based on the concepts of linear spaee can be applied not only to numerieal computation of the Electromagnetic field, but also to the analytic solution. By taking the eigenfunetions as basis functions and test funetions, a very simple, but generalized formula of the solution for the scalar wave equations and Poission s equations can be got. This formula not only can be applied to the scalar wave equations; but also can be applied to vector wave equations by some modifications.

On the basis of the equation of Fresnel-Kirchhoff scalar diffraction field, it is shown that the impulse responses of parallel-fed aperture antennas of arbitrary configurations with arbitrary aperture amplitude distributions and those of end-fed rectangular aperture antennas with arbitrary aperture amplitude distributions can all be expressed in the aperture amplitude distributions, and that the impulse responses of rectangular aperture antennas with separable aperture distributions and those of circular aperture antennas with circularly symmetric distributions are special cases of the above general ones.

In this paper, (1) The concept of gencralized hybrid basis is introduced and the hybrid analysis given by the author in 1982 is extended to the generalized bybrid analysis. (2) The coneept of generalized diakoptics is introduced and the one-to-one correspondence between the generalized diakoptics and the generalized hybrid analysis is established. Thus the two analysis methods are unified. (3) The multilevel generalized diakoptics and its algorithm are presented. (4) The concepts of equivalent tree-flower type network and its equivalent interconnected network for fundamental diakoptics are presented.

An pfficient DC fault simulation algorithm for nonliuear eircuits is proposed in which Householder s transform and the method of partitioned matrices are used to minimize the numher of operations for fault simulation. The algorithm is also applicable to DC analysis for nonlinear circuits.

The design considerations and experimental results of compact low noice GaAs MESFET amplifiers for UHF operation were described in this paper. The miniaturized and optimized circuits were obtained by means of special matching network and CAD technique. Both two-stage unit at 700 MHz and three-stage unit at 1000 MHz were fabricated on 50×60 mm² alumina substrate, and the power gain of 29 and 30 dB, noice figure of 0.8 and 1.2 dB and bandwidth of 40(3 dB) and 100 MHz (1 dB) were obtained, respectively, The satellite direct broadcasting receiver constructed with the 700 MHz GaAs MESFET amplifier has clear pictures and good sound.

The phase distribution of laser fields is measured by displacement process. The precision of measurement is within 1.5°. This method is also available for undontact measurement of precision optical elements.

In this paper, a microwave switch with optional power division ratio, which uscs PIN diode for controlling, is introduced Analytic formulas are given. They are straightforward and feasible for engineering purposes. The theoretical analysis is ia good agrcement with the experimental result.

PbNb₂O₆-PbCrO₄-PZT piezoelectric ceramies with low radial coupling coefficient has been developed. Its chemical equation is given.This kind of ceramies is characterized by k_p=0.15, Q_M=5000, △f/f_r=6×10^-6. It has been used successfully to make low-frequeucy narrow-band ceramie filter.

A simple technology of dieleetric-insulated crossover for the interwoven intercon-ductors of microwave non-reciprocal junction made of ferrite material is presented. It is aimed at simplifying the complicated processes by using the ZrO₂-air double layers or air single layer insulated crossover technology. A crossover sample has been fabricated. It has good electrical and mechanical.characteristics and is applicable to fabrication of film mode lumped-element ferrite devices.

The effects of the growth conditions of two-phase solution liquid phase epitaxy (LPE) (i.e. growth temperature, cooling rates and solution oomposition) on lattiee mismatch and bandgap wavelength in GaInAs/InP heterojunction LPE layers have been investigated by X-ray double-erystal diffractometry and double-beam spectrophotometer. The interface stress in the grown interface free of misfit dislocations and the lattiee mismatch at growth temperature have been calculated.