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THE STUDY OF LATTICE MATCH IN GaInAsP/InP HETEROJUNCTION LPE LAYERS |
Yang Yi; Wu Xiangsheng; Li Runshen; Tan Ruhuan; Li Yunping; Shui Hailong |
Shanghai Institute of Metallurgy Academia Sinica |
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Abstract The effects of the growth conditions of two-phase solution liquid phase epitaxy (LPE) (i.e. growth temperature, cooling rates and solution oomposition) on lattiee mismatch and bandgap wavelength in GaInAs/InP heterojunction LPE layers have been investigated by X-ray double-erystal diffractometry and double-beam spectrophotometer. The interface stress in the grown interface free of misfit dislocations and the lattiee mismatch at growth temperature have been calculated.
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Received: 25 July 1983
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