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| DESIGN AND PERFORMANCE OF COMPACT LOW NOICE GaAs MESFET AMPLIFIERS FOR UHF OPERATION |
| Wang Wenqi①;Yang Xinmin②; Lu Zhuping②; Zhu Wenyn② |
| ①Shanghai University of Science and Technology Branch; ②Shanghai Institute of Metallurgy; Academia Sinica |
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Abstract The design considerations and experimental results of compact low noice GaAs MESFET amplifiers for UHF operation were described in this paper. The miniaturized and optimized circuits were obtained by means of special matching network and CAD technique. Both two-stage unit at 700 MHz and three-stage unit at 1000 MHz were fabricated on 50×60 mm2 alumina substrate, and the power gain of 29 and 30 dB, noice figure of 0.8 and 1.2 dB and bandwidth of 40(3 dB) and 100 MHz (1 dB) were obtained, respectively, The satellite direct broadcasting receiver constructed with the 700 MHz GaAs MESFET amplifier has clear pictures and good sound.
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Received: 01 January 1900
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1985, Vol. 7 
