电子与信息学报
   
  
   Home  |  About Journal  |  Ethics Statement  |  Editorial Board  |  Instruction  |  Subscriptions  |  Contacts Us  |  Message  |  Chinese
电子与信息学报
OFFICE ONLINE
　·Author Center
　·Peer Review
　·Editor Work
　·Office Work
　·Editor-in-chief
 
JOURNAL
　·Forthcoming Articles
　·Current Issue
　·Next Issue
　·Archive
　·Advanced Search
　·Archive By Volume
　·Archive By Subject
　·Email Alert
　·
 
Hot Paper
　·Top Cited
　·TOP Read Articles
　·TOP Download Articles
 
Other articles related with "TN386":
322 Li Ze-hong; Zhang Bo; Li Zhao-ji
  A Threshold Voltage Model of the Short Channel DMOS
    JEIT   2005 Vol.27 (2): 322-325 [Abstract] (1572) [HTML 1 KB] [PDF 561 KB] (696)
389 Shang Yechun①; Zhang Yirnen②; Zhang Yuming②; Liu Zhongli①
  Study of the electric characteristics and radiation response of 6h-sic mos structure
    JEIT   2003 Vol.25 (3): 389-394 [Abstract] (1663) [HTML 1 KB] [PDF 540 KB] (569)
968 Wang Bo; Hong Xingnan; Gao Baoxin; Pang Yunbo
  ANALYSIS OF THE SUBHARMONIC LOAD PULL CHARACTERISTIC OF THE MESFET POWER AMPLIFIER PRECISELY WITH THE VOLTERRA SERIES METHOD
    JEIT   2002 Vol.24 (7): 968-975 [Abstract] (1997) [HTML 1 KB] [PDF 1578 KB] (576)
982 Liu Hongxia; Hao Yue
  Study on substrate hot-hole-induced physical model of TDDB in thin gate dielectric
    JEIT   2002 Vol.24 (7): 982-986 [Abstract] (1908) [HTML 1 KB] [PDF 1147 KB] (687)
108 Ren Hongxia; Hao Yue
  Study on the degradation induced by acceptor interface state for deep-sub-micron grooved-bate PMOSFET\’s
    JEIT   2002 Vol.24 (1): 108-114 [Abstract] (1809) [HTML 1 KB] [PDF 1212 KB] (636)
1211 Liu Hongxia; Hao Yue
  EXPERIMENT ANALYSIS AND MECHANISM RESEARCH ON BREAKDOWN CHARACTERISTICS OF THIN SiO2 GATE DIELECTRIC
    JEIT   2001 Vol.23 (11): 1211-1215 [Abstract] (1520) [HTML 1 KB] [PDF 991 KB] (577)
203 Shang Yechun; Zhang Yimen; Zhang Yuming
  HIGH TEMPERATURE CHARACTERISTICS OF 6H-SiC JFET
    JEIT   2001 Vol.23 (2): 203-207 [Abstract] (1634) [HTML 1 KB] [PDF 911 KB] (725)
77 Huang Yi; Shen Chuyu
  A STATISTICAL MODEL OF MICROWAVE FET S-PARAMETER USING FACTOR ANALYSIS
    JEIT   1997 Vol.19 (1): 77-82 [Abstract] (1922) [HTML 1 KB] [PDF 978 KB] (1541)
First page | Prev page | Next page | Last pagePage 1 of 1, 8 records
     京ICP备05002787号

© 2010 JOURNAL OF ELECTRONICS & INFORMATION TECHNOLOGY
Institute of Electronics, Chinese Academy of Sciences, P.O.Box 2702, Beijing 100190
Tel: +86-10-58887066　Fax: +86-10- 58887539,Email: jeit@mail.ie.ac.cn

Supported by:Beijing Magtech