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| Study of the electric characteristics and radiation response of 6h-sic mos structure |
| Shang Yechun①; Zhang Yirnen②; Zhang Yuming②; Liu Zhongli① |
| ①Microelectronics R & D Center Institute of Semiconducter CAS Beijing 100083 China;②Microelectronics Institute Xidian University Xi an 710071 China |
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Abstract The radiation response and electric characteristics of 6H-SiC MOS structure are studied with experiment. It is found that the main electronic conduction mechanism in the high field regions of the I-V characteristics is identified to be Fowler-Nordheim tunneling. The fact that ionization radiation effect becomes more notable at high oxide electric field indicates that the generation of radiation induced charge-centers near SiC/SiO2 interface and in gate oxide under high electric field is higher than that under low electric field. SiC MOS structure has a more significant tolerance to y rays than Si MOS structure. Flatband voltage shift of SiC MOS capacitor is less than 2V under radiation of 58kGy(Si).
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Received: 03 September 2001
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2003, Vol. 25 
