受主型界面态在深亚微米槽栅PMOSFET中引起退化的研究

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Abstract The degradation induced by interface state is one main reason for failure occurs in deep-sub-micron MOS devices. Based on the hydrodynamics energy transport model, the degradation induced by acceptor interface state is analyzed for deep-sub-micron grooved-gate and conventional planar PMOSFET with different channel doping density. The simulation results show that the degradation induced by the same interface state density in grooved-gate PMOSFET is larger than that in planar PMOSFET and in both structure devices, the impact of P type acceptor interface state on device performance is far larger than that of N type. It also manifests that the degradation is different for the device with different channel doping density.

Key words： Grooved-gate PMOSFET Interface state density Threshold voltage Drain current driving capability Performance degradation

Received: 23 February 2000

PACS:

TN386.1

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	Ren Hongxia
	Hao Yue

Cite this article:

Ren Hongxia,Hao Yue. Study on the degradation induced by acceptor interface state for deep-sub-micron grooved-bate PMOSFET\’s[J]. , 2002, 24(1): 108-114 .

URL:

http://jeit.ie.ac.cn/EN/ OR http://jeit.ie.ac.cn/EN/Y2002/V24/I1/108