Abstract It is shown from the accelerated lifetime test and noise measurement for integrated operational amplifiers that if their failure is caused by the drift of input bias current or input offset current, the drift is strongly correlated with 1/f noise current in these devices, and both are proportional approximately. In the mechanism analysis, the drift may be attributed to the slow capture effect of oxide traps, which are 1/f noise sources, on the electrons in silicon. Therefore, 1/f noise measurement can be used as a fast and non-destructive tool to evaluate the long term instability of integrated operational amplifiers.
1996, Vol. 18 
