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| SIMULATION AND DESIGN OF DOUBLE-GATED FIELD EMISSION ARRAYS |
| Zhuang Xuezeng; Xia Shanhong; Tao Xinxin |
| Institute of Ecletronics,Academia Sinica,Beijing 100080 |
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Abstract One of the crucial technologies for developing high resolution field emitter displays and vacuum microelectronic devices in microwave and millimeter-wave bands is the design and fabrication of field emitter arrays which can provide with focused electron beam. After having a brief discussion of two kinds of double-gated field emission arrays (DGFEA), the concentric focusing (in plane gates) and the aperture focusing (2-tier gates), presented in the paper are the design and simulation methods of the aperture focusing DGFEA, and simulation results about its emission characteristics and focusing performance. It is believed from the results that the DGFEA can produce a pretty parallel electron beam, its maximum emission current density may exceed 300 A/cm2 and it meets the major requirements for developing microwave and millimeter-wave devices, and other strong beam devices.
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Received: 15 January 1997
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1998, Vol. 20 
