非有意掺杂LEC SI GaAs中EL2分布特性的研究

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摘要测量比较了不同条件下热处理后非有意掺杂半绝缘(SI)LEC GaAs中EL2浓度及其分布的变化,为了分析这一变化,还检测了位错和As沉淀的分布。在实验结果基础上,对EL2分布不均匀性的起源和热处理改善EL2分布均匀性的机理进行了讨论。

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	杨瑞霞
	付濬
	李光平

关键词 ： EL2, 位错, AS沉淀, 浓度分布

Abstract：The changes in the concentration and distribution of EL2 in undoped LEC SI GaAs caused by various annealing conditions were measured. The distribution of dislocation and precipitation of As were also measured for analyzing these changes. The origin of the inhomogeneity of EL2 distribution and the mechanism which improves the homogeneity of EL2 distribution by annealing are discussed on the basis of the experimental results.

Key words： EL2 Dislocation Precipitation of As GaAs concentration distribution

收稿日期: 1993-07-11

PACS:

TN305.3

引用本文:

杨瑞霞; 付濬; 李光平. 非有意掺杂LEC SI GaAs中EL2分布特性的研究[J]. 电子与信息学报, 1995, 17(1): 92-97 . Yang Ruixia^①; Fu Jun^①;Li Guangping^②. STUDY ON DISTRIBUTION CHARACTERISTICS OF EL2 IN UNDOPED LEC SI GaAs. , 1995, 17(1): 92-97 .

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http://jeit.ie.ac.cn/CN/ 或 http://jeit.ie.ac.cn/CN/Y1995/V17/I1/92