Abstract:The degradation induced by interface state is one main reason for failure occurs in deep-sub-micron MOS devices. Based on the hydrodynamics energy transport model, the degradation induced by acceptor interface state is analyzed for deep-sub-micron grooved-gate and conventional planar PMOSFET with different channel doping density. The simulation results show that the degradation induced by the same interface state density in grooved-gate PMOSFET is larger than that in planar PMOSFET and in both structure devices, the impact of P type acceptor interface state on device performance is far larger than that of N type. It also manifests that the degradation is different for the device with different channel doping density.
任红霞; 郝跃. 受主型界面态在深亚微米槽栅PMOSFET中引起退化的研究[J]. 电子与信息学报, 2002, 24(1): 108-114 .
Ren Hongxia; Hao Yue. Study on the degradation induced by acceptor interface state for deep-sub-micron grooved-bate PMOSFET\’s. , 2002, 24(1): 108-114 .