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| Wide-Band Physical Model for Spiral Inductors on Silicon Substrate |
| Zheng Wei; Wang Xiang-zhan; Ren Jun; Yang Fan; You Huan-cheng; Li Jing-chun; Yang Mo-hua |
| The College of Micro-Electronic and Solid-State Electronics, University of Electronic Science & Technology of China, Chengdu 610054, China |
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Abstract For monolithic RF spiral inductor on high-loss silicon substrate, a novel physical model is proposed, in which functions of skin effect, proximity effect and eddy current loss in the substrate to frequency-dependent series parameters Ls and Rs are accounted in the light of modified partial equivalent element circuit methodology and Maxwell’s electromagnetic theory, and in the meanwhile, the distributed characteristics of parasitic capacitances are captured by nπ equivalent-circuit. Up to 20GHz, the model reveals quite good accuracy within 7% with data from full-wave electromagnetic filed simulator, including equivalent inductor Leff , resistor Reff and quality factor Q and, hopefully, it can be applied to further theory research and optimum design of RFIC spiral inductor on Si.
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Received: 01 November 2005
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2007, Vol. 29 
