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A New Charge Pump with High Voltage Gain for Low Supply Environment |
Yang Sheng-guang; He Shu-zhuan; Gao Ming-lun; Li Wei; Zhou Song-ming |
Institute of VLSI Design, Nanjing University, Nanjing 210093, China;Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China |
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Abstract Charge pump plays an important role in low supply voltage integrated circuits. Three important issues of on-chip charge pump circuits are voltage gain, output voltage ripple and area efficiency. A new charge pump is proposed in this paper which introduces a subsidiary charge pump and two voltage level shifters. The new structure can generate different magnitude clocks to drive the gates of switch transistors, which will improve voltage gain of charge pump greatly by means of effective control of conduction of them. At the other hand, we can avoid the threshold voltage loss by taking PMOS transistors as switch transistors. Simulation results show: The new charge pumps have higher voltage gain, shorter start up time and small voltage ripple compared with those proposed in earlier papers, especially in low supply voltage environment.
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Received: 25 November 2005
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