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| The Study of Multifractal Characterization of IC Defect Outline |
| Sun Xiao-li; Hao Yue; Song Guo-Xiang |
| Science Department, Xidian University, Xi’an 710071, China |
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Abstract The shapes of real defect outline usually play an extremely important role in the yield prediction and inductive fault analysis of Integrated Circuits (IC). In this paper, the multifractal characterizations of real defect outlines are discussed, and the multifractal spectrum of one typical real defect outline is estimated by the method of Wavelet Transform Modulus Maximum(WTMM), the results obtained in this paper will be useful for a fine characterization and computer simulation of the defects on wafer.
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Received: 27 June 2005
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2007, Vol. 29 
