|
|
|
| Study on the Hydrogenation of SiC Surface |
| Luo Xiao-rong①; Zhang Bo①; Li Zhao-ji①; Gong Min② |
①College of Microelectronics and Solid-State Electronics, UESTC of China, Chengdu 610054, China;
②College of Physics Science & Technology, SiChuan University, Chengdu 610064, China |
|
|
|
|
Abstract The conception and the structure of transition layer of 6H-SiC (0001)/ SiO2 are proposed in this paper. The hydrogenation model of SiC surface is developed by analyzing the reaction mechanism of SiC surface and HF solution. The density of surface states is lowered to unpin the Fermi level because the hydrogen passivated dangling bonds of the surface. The ideal SiC surface is formed. The model is applied to treat SiC surface of the SiC/ metal contacts, Schottky junctions with ideality factor n=1.20~1.25 and Ohmic contacts with ρ＝5×10-3 cm2~7×10-3 cm2 are obtained under the condition of below 100℃. Its advantages lie in not only avoiding the annealing at 800~1200℃ for Ohmic contacts, but also improving the electrical performances of the Schottky barrier contacts. The hydrogenation model of SiC surface is good agreement with experiments.
|
|
Received: 02 February 2005
|
|
|
|
|
|
|
|
|
2006, Vol. 28 
