基于二极管单元的高密度掩模ROM设计

doi:10.11999/JEIT160938

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Abstract

Since the traditional Read-Only Memory (ROM) has the problems of low density and high power consumption, a mask ROM based on diode cells and contact-programming process is proposed. With dual-trench isolation process and borderless contact scheme, the diode array can realize ultrahigh density. Based on the proposed novel diode array, a mask ROM macro with 2 Mb capacity is designed, which contains 8 256 kb sub-arrays. The diode arrays are fabricated with 40 nm design rule and the peripheral logic circuits are achieved in 2.5 V CMOS process. The effective area of the diode cell is only 0.017 μm² and the density of the diode array is 0.0268 mm²/Mb. Test results show that the cell feature of diodes is good and the bit yield of the 2 Mb ROM achieves 99.8% under 2.5 V supply voltage.

Key words： Mask Read-Only Memory (ROM) Diode array High-density Low power Dual-trench isolation process

Received: 19 September 2016 Published: 21 March 2017

PACS:

TP333.7

Fund:

“Strategic Priority Research Program” of the Chinese Academy of Sciences (XDA09020402), The National Key Basic Research Program of China (2013CBA01904, 2013CBA01900, 2010CB934300, 2011CBA00607, 2011CB932804), The National Integrate Circuit Research Program of China (2009ZX02023-003), The National Natural Science Foundation of China (61076121, 61176122, 61106001, 61261160500, 61376006)

Corresponding Authors: YE Yong E-mail: yeyong1991@mail.sim.ac.cn

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	YE Yong
	KANG Yong
	SONG Zhitang
	CHEN Bangming

Cite this article:

YE Yong,KANG Yong,SONG Zhitang等. Design of High-density Mask ROM Based on Diode Cells[J]. JEIT, 2017, 39(6): 1452-1457.

URL:

http://jeit.ie.ac.cn/EN/10.11999/JEIT160938 OR http://jeit.ie.ac.cn/EN/Y2017/V39/I6/1452

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