基于缩短极化码的MLC NAND Flash差错控制技术研究

doi:10.11999/JEIT160864

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Abstract

In order to improve the BER performance of MLC NAND Flash, this paper presents a shortened polarization-based optimized codes for MLC NAND Flash. Optimized shortened codes are obtained by optimizing shortened pattern. Firstly, basic shortened pattern is obtained by bit reversal reordering, and then the freeze bits are selected with a lower channel capacity to constitute optimized shortened pattern, the resulting punctered bits are all frozen bits, this method can significantly improve the error correction performance. Meanwhile, according to the error asymmetry of MLC unit, unequal error protection is used for the LSB and MSB. Simulation results show that the performance of the optimized shortened codes is better than LDPC and basic shortened polar code about 3.72~5.89 dB and 1.47~3.49 dB gain at the frame error rate of 10^-3; compared to the same rate based optimized shortened codes, the new ECC program obtains gain about 0.25 dB .

Key words： Polar code Multi Level Cell (MLC) NAND Flash Shortened codes Unequal Error Protection (UEP)

Received: 22 August 2016 Published: 21 March 2017

PACS:

TN911.22

Fund:

The Natural Science Foundation of Zhejiang Province (LY16F010013), The Key Science and Technology Innovation Team Foundation of Zhejiang Province (2013TD03), The National Natural Science Foundation of China (61401130)

Corresponding Authors: GUO Rui E-mail: guorui@hdu.edu.cn

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	GUO Rui
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Cite this article:

GUO Rui,WANG Meijie,WANG Jie. Research on the MLC Nand Flash Error Control Technology Based on Polar Codes[J]. JEIT, 2017, 39(7): 1658-1665.

URL:

http://jeit.ie.ac.cn/EN/10.11999/JEIT160864 OR http://jeit.ie.ac.cn/EN/Y2017/V39/I7/1658

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