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| Study on the Prediction of Single-event Effects Induced Failure Rate for Embedded Memories |
| Zhi Tian①② Yang Hai-gang① Cai Gang① Qiu Xiao-qiang① Li Tian-wen①② Wang Xin-gang①② |
①(Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China)
②(The University of Chinese Academy of Sciences, Beijing 100190, China) |
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Abstract Embedded memories are easily influenced by Single-Event Effects (SEE). A model to calculate the SEE failure rate of an embedded memory is proposed, which considers the likelihood that an single-event upset or single-event transient will become an error in different types of circuits. It can also be used for the quantitative analysis of SEE mitigation techniques for versatile memories. Experimental investigations are performed using heavy ion accelerators on an experimental embedded programmable memory, which is designed by Institute of Electronics, Chinese Academy of Sciences. The result of 10.5% average error verifies the effectiveness of the proposed model.
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Received: 25 December 2013
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Corresponding Authors:
Yang Hai-gang
E-mail: yanghg@mail.ie.ac.cn
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2014, Vol. 36 
