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| Design and Testing of a SOI Electric-field Microsensor |
| Yang Peng-fei①② Peng Chun-rong① Zhang Hai-yan①② Liu Shi-guo① Xia Shan-hong① |
①(State Key Lab of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China)
②(Graduate University of the Chinese Academy of Sciences, Beijing 100039, China) |
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Abstract A novel and high-performance electric field microsensor is presented based on Silicon-On-Insulator (SOI) fabrication technology. In order to improve the sensitivity and SNR (Signal to Noise Ratio) of the sensor, the unique design of the shutter covering the side wall of the sensing electrodes is used, which reduces the effect of fringing fields of the shutter. Moreover, the electrode structure parameters of the sensor are optimized by Finite Element Simulation (FES). It is found that the new sensor had a resolution of 50 V/m at atmospheric pressure, a uncertainty of better than 2% in a electric field range of 0～50 kV/m.
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Received: 22 November 2010
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Corresponding Authors:
Yang Peng-fei
E-mail: yang330650591@126.com
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2011, Vol. 33 
