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| THE STUDY OF GaAs DOUBLE HETEROJUNCTION HIGH-RADIANCE LIGHT-EMITTING DIODES |
| Pan Hui-zhen Zhang Gui-cheng Xu Shao-hua Pang Youg-xiu ChengZong-quan Fu Xiao-mei Zhu Li-ming Hu Dao-shan |
| Shanghai Institute of Metallurgy; Academia Sinica |
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Abstract GaAs-Ga1-x Alx As double heterojunction material was grown by liquid phase epitaxial technique, and small area high radiance light emitting diodes are made. The radiation power is above 100W/sr.cm2, output power of the tail fibre (inner diameter 60μm N.A.=0.17) is 200μW, and extrapolated life reaches 105 hours. It is already being used in the 1.8km 8.448 Mb/s PCM-120 route optic fibre telephone communication system. Analysis is made on the operational characteristics of the diodes. Factors affecting its proper use and approaches for improvement are discussed.
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Received: 21 February 1980
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1981, Vol. 3 
