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| THE SULPHUR INCORPORATION AND THE GROWTH OFSUBMICRON THIN FILM IN GaAs VAPOR PHASEEPITAXY SYSTEM |
| Peng Rui-wu Sun Chang-zhu Shen Song-hua |
| Shanghai Institute of Metallurgy; Academica Sinica |
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Abstract The doping behavior of sulphur in GaAs vapor phase epitaxy has been studied with the Ga-AsCl3-H2 system. The doping machamsm of sulphur has been discussed and submieron epilayers have been grown. It has been shown that the epitaxial layer obtained has high qualities and the reprodueibility of epitaxial growth is good. The typical electrical properties of epitaxial layer obtained are that the breakdown voltage is about 7-10V and the carrier concentration is about 1-2 × 1017/cm3 when epilayer thickness is less than 0.4 μm. For the single layer and the multilayer structures, the concentration drop in interface between the active layer and the buffer layer or substrate are sharp and the width of interface region is about 0.1μm. The epilayers obtained have been used to fabricate the microwave devices such as varactor and far infrared detectors.
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Received: 28 April 1981
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1983, Vol. 5 
