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A STUDY OF Zn DIFFUSION IN InP AT LOW TEMPERATURE |
Zhang Gui-cheng Xu Shao-hua Shui Hai-long |
Shanghai Institute of Metallurgy;Acaaemia Sinica |
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Abstract In this report the diffusion of Zn in InP at low temperature is investigated. The experiment is accomplished in an evacuated and sealed quartz ampoule using Zn3P2 as the source of Zn.The electrical characteristics of the samples obtained by the isotemperature process and the two-temperature process are compared. It is found that the two-temperature process may obtain a smooth, no damage and high-concentration surface layer. This process has been applied to fabricate InGaAsP/InP light emitting diodes, and the diodes obtained have an output power of about 1mW with a series resistance of 2—3Ω. the behaviors of Zn diffusion in InP are discussed, and the anomalous phenomena in isotemperature diffusion at 550℃ are explained.
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Received: 08 July 1981
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