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| METALLURGICAL AND ELECTRICAL CHARACTERISTICS OF p-InP/TiPdAu SYSTEMS |
| Zhang Guicheng Shui Hailong |
| Shanghai Institute of Metallurgy; Academia Sinica |
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Abstract The interdiffusion of p-InP/TiPdAu at interface has been investigated by Auger electron spectroscopy (AES). The surface morphology of heat treatment samples are observed. The specific contact resistance as a function of heat treatment temperatures for the p-InP/ TiPdAu systems is also given.It is found that the interdiffusion of Au, In, P occurs during the heat treatment of p-InP/TiPdAu. The Pd layer as a diffusion barrier plays an important role. The interdiffusion, morphology and specific contact resistance for heat treatment samples of p-InP/TiPdau have interconnection and strong dependence on each other. The TiPdAu layers are used as p-electrodes for InGaAsP/InP double heterojunction light emitting diodes. The p-electrode has good stability.
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Received: 13 February 1982
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1984, Vol. 6 
