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| CHARACTERISTICS OF LARGE AREA GERMANIUM PHOTODIODE |
| Yang Linbao Chen Ruizhang Chen Qiyu |
| Shanghai Institute of Metallurgy;Academia Sinica |
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Abstract A fabrication procedure for large area germanium photodiodes has been demonstrated and the measuring methods on characteristics of spectral response, quantum efficiency, fre-quency response and I-V for this device have been described. At 1.3 μm wavelength, the responsibility and the quantum efficiency are 0.47 A/W and 45%, respectively. The frequ-ency response of large area germanium photodiodes is about 100kHz. When bias voltage VB is in the range of 5V at room temperature (12℃), the dark current density of the fabricated diodes is 23×10-6 A/cm2(Φ=7.5mm). Typical dark current and I-V dependences on temperature were studied for the large area germanium photodiodes in the range of 20—26℃. We have also analysed and discussed these experimental results.
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Received: 24 May 1982
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1984, Vol. 6 
