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THE DISTRIBUTION OF DENSITY OF GAP STATES FOR PHOSPHORUS-DOPED AMORPHOUS SILICON MEASURED BY DEEP LEVEL TRANSIENT SPECTROSCOPY |
Du Yongchang①; Zhang Yufeng①; Yang Datong②; Zhang Guanghua②; Han Ruqi③ |
Beijing University |
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Abstract A density-of-state distribution in the pseudo-gap of phosphorus-doped a-Si:H material prepared by GD method has been measured experimentally by deep level tran-sient spectroscopy (DLTS). A minimum value of 7×1015cm-3 eV-1 has been obtained at the energy of about 0.45 eV below Ec. This physical picture is quite different from the previous one obtained by the field effect method. Some comments on the method used and the theoretical analysis are given.
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Received: 05 May 1983
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