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| INVESTIGATION OF PROBLEMS ABOUT THE LIGHT POWER OUTPUT OF GaAs/GaAlAs DH SURFACE EMITTING DIODES |
| Li Xiqiang; Sun Bingyu |
| Shanghai Institute of Metallurgy Academia Sinica |
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Abstract A modified conventional RF sputtering equipment was used in preparing the Al2O3 antireflectrve coating (ARC). An increase in the light power output of 30-66% at a driving current 200 mA for the GaAs/GaAlAs DH LEDs coated on light emitting surface with ARC thickness of about λ/4 has been obtained. In the same case a light output increase of less than 30% for these degraded LEDs has been determined. It may probably be attributed to the defects formed in the bulk of the Ga1-xAlxAs crystals caused by degradation of diodes restrict the increase of light output.
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Received: 16 August 1983
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1985, Vol. 7 
