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VERIFICATION OF THE PHYSICAL REASON FOR THE CURRENT GAIN FALL-OFF AT HIGH CURRENTS |
Lin Zhaohui; Xu Huiying |
Department of Physics Beijing University |
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Abstract Starting from the temperature characteritics of the transistor current gain, the temperature-dependent law of the collector current just as the current gain begins to fall-off is studied theoretically and experimentally. It is verified that the physical reason is the base widening effect.
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Received: 13 June 1983
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