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| THE I-V CHARACTERISTIC ANALYSIS OF SCHOTTKY AMORPHOUS SILICON SOLAR CELLS |
| Xu Le |
| Department of Physics Nankai University |
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Abstract The present paper introduces an experimental method for measuring the width of illuminated and short-circuited Ni/a-Si: H Schottky barriers. The current-voltage curves for the Schottky barrier solar cells under AM1, 100 mW/cm2 illumination are caleulated by using the parameters determined by experiments. The diffusion length of holes in a-Si:H obtained from the illuminated I-V curve is consistent with the results measured by the author with the surface photovoltage method in 1983. The factors affeeting the fill factor are analysed on the basis of the calculated results. A comparison of the calculated results to the experiment's reveals that the very low fill factor of the solar cells measured is due to series and shunt resistances rather than the low diffusion length of the holes.
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Received: 16 April 1984
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1985, Vol. 7 
