|
|
A DESIGN OF DOUBLE INJECTION TYPE MAGNETO-DIODE |
Huang Dexing |
Department of Physics Heilongjiang University |
|
|
Abstract A new design is proposed for long P+IN+ type Ge magnetodiode with a high recombination region on one side. The optimal relation is established between its length (l), depth (d), width (ω) and resistivity (ρ) for designing Ge magnetodiode: (ρ/ω) ×(l/d)3=10.75(△T)2/(I03Rth2) △T is the limit of chip temperature rise, Rth the thermal resistance, I0 the current flowing through diode.
|
Received: 26 June 1984
|
|
|
|
|
|
|