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| INTERACTIONS OF THE p-InP WITH Au-Zn, Ti/Au, Pd/Au Ti/Pd/Au AT INTERFACE AND THEIR ELECTRICAL PROPERTIES |
| Zhang Quicheng①; Cheng Zongquan①;Yu Zhizhong② |
| ①Shanghai Institute of Metallurgy Academia Sinica;②Shanghai Institute of Measurement Technique |
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Abstract In this report, interdiffusion of the p-IuP with Au-Zn Ti/Au, Pd/Au, and Ti/Pd/ Au at interface has been investigated by Auger electron spectroscopy and electron spectroscopy for chemical analysis. The surfaco morphology for the heat treatment are observed with scanning electron microscopy.It is found that the in-diffusion of Au is easier than that of Pd and Ti, and the out-diffusion of In is easier than that of P. The effects of the alloying temperature and time on the specific contact resistance of the p-InP/Zu-Zn system are studied. The lower specific contact resistance, ρc=2.4--2.7×10-4 cm2, is obtained when alloying at 450℃ for 2 min or at 350℃ for 30 min. these results indicate that the specific contact resistance strongly depends on the interface "interdiffusion degree". The Zn in Au-Zn alloy distributes onto the most surface layer of the p-InP/Au-Zn system during evaporation process and heat treatment. It may be one of the reasons for the higher specific contact resistance.
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Received: 10 July 1984
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1986, Vol. 8 
