低噪声1.2—1.8GHz致冷FET放大器

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Abstract A low-noise 1.2-1.8 GHz cooled GaAs FET amplifier with mixer bias circuit is reported. The amplifier noise temperature obtained at 20 K ambient in the frequency range of 1.2-1.7 GHz is 10 K. The lowest noise temperature is 4 K. The gain is about 30 dB. An automatic measuring instrument for noise temperature was designed. The noise effect of the input cable and the error analysis of total measuring were made. The total measurement error is 2 K.

Received: 31 May 1985

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	Cao Yiting

Cite this article:

Cao Yiting. A LOW-NOISE 1.2-1.8 GHz COOLED GaAs FET AMPLIFIER[J]. , 1987, 9(1): 90-95 .

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http://jeit.ie.ac.cn/EN/ OR http://jeit.ie.ac.cn/EN/Y1987/V9/I1/90