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| STUDY OF Si(100) AND (111) SURFACES AND MOLECULAR BEAM EPITAXY OF Ni ON THEM BY RHEED |
| Gao Mingtai |
| Institute of Electronics Academic Sinica |
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Abstract Clean Si (100) and (111) surfaces produced by the Ar+ ion bombardment and high temperature annealing techniques, and the epitaxial growth of nickel silicides on them at room temperature using molecular beam method are studied by reflection high energy electro diffraction (RHEED). The experimental results show that Si(111)7×7 and its negative zone RHEED pattern, Si(100)2×1, Si(111)19×19 Ni and Si(100)4×2Ni structures are obtained, and the lattice structures of nickel silicide produced during epitaxy with low growing rate (0.16--0.5Å per minute) is the same as that of silicon substrate.
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Received: 30 May 1986
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1987, Vol. 9 
