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LOW TEMPERATURE OPEN TUBE Zn DIFFUSION IN InP/lnGaAs(P) |
Li Weidan; Pan Huizhen |
Shanghai Institute of Metallurgy Acadcmia Sinica |
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Abstract A new method for accurate Zn diffusion in InP/InGaAs(P) at low temperature is put forward in order to keep the carrier profile in multilayers from redistribution. Several kinds of diffusion sources with different Zn contents are used in the experiment that shows good reprodu-cibility of the method. Using this method, the characteristics of low temperature Zn diffusion in InP, InGaAs and InGaAsP are studied, and it is found for the first time that the Zn diffusion, rate is proportional to the square of the phosphorus content in the materials.
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Received: 22 May 1986
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