Abstract A new processing method in which the antireflective coating (AR) Si3N4 is deposite by LPCVD, at the same time, the Al-alloyed high low junction BSF is formed, is described. In the method, the procedure is simplified for fabricating high efficiency silicon solar cells, that is the AR-BSF to be formed in one step, and because the system is in high vacuum and the cells are in the ambinet of N2 as well as H2, so that the surface characteristics of emitters in the cells is improved.
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Received: 21 July 1986
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