GaAlAs/GaAs双异质结发光管中的深能级

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Abstract Deep levels in Ga_1-xAl_xAs/GaAs double-heterojunction LEDs have been studied by DLTS. The Ga_1-xAl_xAs DH material was grown by LPE technique. The dark deitcts are ob-jerved with an infrared line scanner. The effect of the oxygen contamination on the deep levels in Si-doped active layer is found. The activation energy E_C-E_D≈0.29 eV. The DSD are sometimes generated in the emitting area. It did not related to the deep levels obviously.

Key words： LED GaAlAs/GaAs double heterojunction Deep level

Received: 15 April 1987

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	Zhang Guicheng Wu Zheng Chen Ziyao Zhou Binglin

Cite this article:

Zhang Guicheng Wu Zheng Chen Ziyao Zhou Binglin. STUDY OF DEEP LEVELS IN Ga_(1-x)AlxAs/GaAs DH LEDs[J]. , 1989, 11(3): 333-336 .

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http://jeit.ie.ac.cn/EN/ OR http://jeit.ie.ac.cn/EN/Y1989/V11/I3/333