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| THEORETICAL ANALYSIS OF THE PRESSURE-MAGNETOELECTRIC EFFECT OF JFET |
| Wen Dianzhong |
| Heilongjiang University, Harbin |
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Abstract The pressure-magnetoelectric effect of JFET is discussed by using standard relaxation techniques. A theoretical evaluation of the pressure sensitivity and Hall sensitivity of the n-channel silicon JFET with various geometries (W/L), gate voltages (VGS) and drain voltages (VDS) is made. The results show that when P≠0,B≠0, the current-pressure sensitivity is about 2.5%·cm2/N, supposing W/L = 1/2-1. A junction field effect-pressure sensor with high stability and low noise is designed.
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Received: 22 November 1987
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1989, Vol. 11 
