Abstract Energy gap and minority-carrier recombination lifetime are important physical parameters in the emitter of silicon transistor. Using temperature characteristics obtained from the reverse diffusion current of p-n junction and by means of linear extrapolation, a new method for determination of the energy gap at 0K is presented. Based on the carrier Fermi-Dirac statistic distribution, a method for determination of minority-carrier recombination lifetime in highly doped emitter is presented. This test method is simple and can be used in practice.
Zhen Jiang,Feng Yaolan. A NEW METHOD FOR DETERMINATION OF ENERGY GAP AND MINORITY-CARRIER RECOMBINATION LIFETIME IN HIGHLY DOPED EMITTER[J]. , 1989, 11(4): 439-443 .