BF<sup>+</sup><sub>2</sub>注入的多晶硅薄膜快速热退火后氟行为的研究

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Abstract The physical and electrical properties of BF⁺₂implanted polysilicon film subjected to rapid thermal annealing (RTA) are presented. It is found that the out diffusion of F and its segregation at polysilicon/silicon oxide interface during RTA are the major causes of F anomalous migration. Fluorine bubbles were observed in BF⁺₂ implanted samples at doses of 1×10¹⁵ and 5×10¹⁵cm^-2 after RTA.

Key words： Ion implantation Rapid thermal annealing Fluorine bubble

Received: 18 May 1987

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	Lin Chenglu Ni Rushan Zou Shichang

Cite this article:

Lin Chenglu Ni Rushan Zou Shichang. FLUORINE BEHAVIOUR IN BF⁺₂ IMPLANTED POLYSILICON FILMS SUBJECTED TO RAPID THERMAL ANNEALING[J]. , 1989, 11(4): 434-438 .

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http://jeit.ie.ac.cn/EN/ OR http://jeit.ie.ac.cn/EN/Y1989/V11/I4/434