多层a-Si∶H/a-SiN<sub>x</sub>∶H薄膜中氢含量的研究

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Abstract The hydrogen effusion and its temperature dependence in semiconducting amorphous a-si:H/a-Si_N,:H multilayer films prepared by PECVD has been studied using IR absorption, nuclear reaction method, SIMS and TEM. Some possible interpretations are presented for out-diffusion of hydrogen in the films.

Key words： Amorphous silicon Multilayer films Annealig treatment Out-diffusion of hydrogen

Received: 29 September 1987

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	Zhang Tongjun

Cite this article:

Zhang Tongjun. A STUDY OF THE HYDROGEN CONTENT IN a-Si:H/a-SiN_x:H MULTILAYER FILMS[J]. , 1989, 11(6): 656-660 .

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http://jeit.ie.ac.cn/EN/ OR http://jeit.ie.ac.cn/EN/Y1989/V11/I6/656

[1]	Hai Yuhan^①; Hai Hao^②; Xi Zhonghe^③; Zhang Qiang^④. INVESTIGATION OF CHARGE INTENSIFICATION EFFECT IN a-Si:H BY MEANS OF PHOTOELECTRIC SENSITIVITY METHOD[J]. , 1999, 21(5): 686-691 .