Abstract A metal-oxide secondary emission film can be deposited on glass, ceramic or semiconductor substrates by thermal decomposition of an organo-metal alkoxide. For instance, MgO (or Al2O3) secondary emission film can be obtained from magnesium (or Aluminium) ethoxide thermal decomposition. In the present method, Al2O3: Mo secondary emission film has been made from thermal decomposition of home-made Aluminium ethoxide and Molybdenum pentachloride. The depositing conditions are T = 450℃ and t=12min for the about 1000Å thickness of film to get. The maximum secondary emission coefficient and resistivity of the film are δmax=3.1, ρ=107-109, Ω·cm respectively.