砷化镓表面自旋极化光电子发射

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Abstract The principle of the spin polarized effect of photoelectrons emitted from NEA GaAs surface which is irradiated by circularly polarized light is described in detail. The preparation of NEA GaAs surface and apparatus used also are mentioned. A photoelectron beam with sensitivity of 8 μA/mW and polarization of above 35% is obtained on the NEA GaAs (100) surface in the activation with caesium and oxygen. It is found that the first maximum emission occurs as the GaAs surface is caesiated in a monolayer of 50% to 60% and unstable emission is caused by desorption of caesium.

Key words： NEA photoemission Spin polarization electron source Circularly polarized light

Received: 29 September 1987

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	Zhou Qing
	Zhao Shouzhen
	Li Yuming
	Fang Lan
	Zhang Liming

Cite this article:

Zhou Qing,Zhao Shouzhen,Li Yuming等. THE SPIN POLARIZED EFFECT OF PHOTOELECTRONS EMITTED FROM GaAs SURFACE[J]. , 1990, 12(2): 219-224 .

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http://jeit.ie.ac.cn/EN/ OR http://jeit.ie.ac.cn/EN/Y1990/V12/I2/219