正向小注入脉冲下多子陷阱响应和两种载流子俘获率之比

Abstract
Figure/Table
References
Related Citation (1)

Download: PDF (993 KB)
Export: BibTeX | EndNote (RIS)

Abstract The response of the majority carrier traps in the semiconductors p⁺-n junction is analysed in detail under the low-injecting conditions. It points out that the effects of the majority carrier injecting and captured by the traps may happen if the forward bias voltage is larger enough but limited within the low-injection range. Yhen the reverse bias voltage is smaller so that the response of the tail region is not neglected than of the whole response region, then the effect of the minority carriers injecting and captured will be observable in the DLTS. It can be used to measure the C_p/C_n.

Key words： Semiconductor p-n junction

Received: 23 February 1988

	Service

	E-mail this article
	Add to my bookshelf
	Add to citation manager
	E-mail Alert
	RSS
	Articles by authors



	Fu Chunyin
	Lu Yongling
	Zeng Shurong

Cite this article:

Fu Chunyin,Lu Yongling,Zeng Shurong. THE RESPONSE OF MAJORITY CARRIER TRAP UNDER THE FORWARD BIAS LOW-INJECTION PULSE AND THE RATIO OF THE CAPTURE CONSTANTS OF THE TWO KINDS OF CARRIERS[J]. , 1990, 12(2): 208-213 .

URL:

http://jeit.ie.ac.cn/EN/ OR http://jeit.ie.ac.cn/EN/Y1990/V12/I2/208