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THE ZINC INCORPORATION AND THE PREPARATION OF PHOTOCATHODE MATERIALS IN Ga-AsCl3-H2 SYSTEM |
Peng Ruiwu①; Xu Chenmei①; Li Chuiyun①; Zhang Xiafang①;Zhao Zhe② |
①Shanghai Institute of Metallurgy, Academia Sinica,Shanghai; ②Shanghai University of Engineering and Technology, Shanghai |
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Abstract The incorporation and behavior of impurity Zn in VPE of GaAs are studied by using metallic Zn as a dopant in Ga-AsCl3-H2 system.The distribution coefficient and hole concentration of Zn in GaAs are 10 and >1×1020cm-3 respectively, which are 3 or 2 order greater than that of Cd doping, and it ensures the preparation of p-GaAs with high hole concentration for photocathode fabrication. Combining Zn and S doping techniques, the p-n junction structure materials were reproducibly produced with more abrupt transition interface.
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Received: 02 May 1988
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