TEM分析用的半导体横截面样品的制备和分析的结果

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Abstract The technique for preparing cross-sectional specimen of semiconductor for TEM is shown. In such specimens prepared with the technique, an unexpected periodic compositional modulation in the fine low-dimensional structure named "Fine Low Dimensional Modulated Fringes" of GaAs/AlGaAs multilayers grown by MBE are observed. Some new patterns of dislocations, defects and microtwins etc. in GaAs/Si grown by both MBE and MOCVD are remarked. The technology can be adapted to the study of other systems of semiconductor materials also.

Key words： Sandwich cross-sectional specimen technology Electron microscopy Fine low dimentional modulated fringes Microtwins Superlattice （SL）

Received: 22 December 1988

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	Fan Rongtuan

Cite this article:

Fan Rongtuan. PREPARATION OF CROSS-SECTIONAL SPECIMEN OF SEMICONDUCTOR FOR TEM AND ANALYTICRESULTS[J]. , 1990, 12(6): 656-659 .

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http://jeit.ie.ac.cn/EN/ OR http://jeit.ie.ac.cn/EN/Y1990/V12/I6/656

[1]	Fan Rongtuan^①;C. J. Humphreys^②. OBSERVATION OF FINE LOW DIMENSIONAL MODULATED FRINGES IN GaAs/Al_xGa_1-xAs MULTILAYER HETEROSTRUCTURES GROWN BY MBI[J]. , 1990, 12(1): 93-99 .