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NONLINEAR DISTORTION ANALYSIS OF BIPOLARTRANSISTOR |
He Fang①;Hu Sifu② |
①Yaguang Electronic Factory Chengdu 610051;②University of Electronic Science and Technology of China Chengdu 610054 |
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Abstract An AC small-signal transistor model incorporating 8 nonlinearities using Taylor series representations is described. Based on this method, a nonlinear distortion-analysis program has been developed. It is used to compute the third-order intermodulation distortion IMs. The relations between IM3 and the operating frequency, emitter and base widths, emitter line current density and doped impurity concentration on base are obtained.
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Received: 31 January 1991
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