硅低温本征载流子浓度的计算

Abstract
Figure/Table
References
Related Citation (1)

Download: PDF (610 KB)
Export: BibTeX | EndNote (RIS)

Abstract A accurate expression for the bandgap and a simple formula for the intrinsic carrier concentration at low temperature are presented. The relation between the intrinsic carrier concentration and the temperature and doping concentration in the heavily doped silicon is obtained, under the consideration of the narrowing effect of the bandgap at the heavy doping level. It is indicated that the intrinsic carrier concentration increases more rapidly with increasing the doping concentration at low temperature than at room temperature.

Key words： Silicon semiconductor Bandgap Intrinsic carrier concentration Lowtemperature characteristic

Received: 22 May 1990

	Service

	E-mail this article
	Add to my bookshelf
	Add to citation manager
	E-mail Alert
	RSS
	Articles by authors




	Zheng Jiang
	Wei Tongli
	Wang Shu
	Huang Qin

Cite this article:

Zheng Jiang,Wei Tongli,Wang Shu等. CALCULATION OF THE INTRINSIC CARRIER CONCENTRA TION IN SILICON AT LOW TEMPERATURE[J]. , 1992, 14(3): 323-328 .

URL:

http://jeit.ie.ac.cn/EN/ OR http://jeit.ie.ac.cn/EN/Y1992/V14/I3/323