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| DETERMINATION OF GENERATION LIFETIME FROM C-t TRANSIENTS UNDER LINEAR VOLTAGE RAMP BIAS |
| Zhang Xiumiao |
| Department of Electronic Engineering Hangzhou University Hangzhou 310008 |
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Abstract When a linear voltage ramp applied to the gate of an MOS device the C-t transients are observed. Before the voltage ramp is applied the MOS capacitor is biased into strong inversion in order to eliminate the surface generation. From the C-t transient curve obtained experimentally, the minority carrier generation lifetime in semiconductor can be determined. The experimental results show that for the same sample the lifetimes extracted from the C-t curves obtained under different voltage sweep rates are consistent each other, and they are consistent with the lifetimes extracted fdom saturation capacitance method.
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Received: 27 April 1991
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1992, Vol. 14 
