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MODEL AND MODELING OF LOW TEMPERATURE CURRENT GAIN OF POLYSILICON EMITTER BIPOLAR TRANSISTOR |
Huang Liuxing; Wei Tongli; Zheng Jiang; Cao Juncheng |
Microelectronics Center, Southeast University, Nanjing 210018 |
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Abstract A unified model of low temperature current gain of polysilicon emitter bipolar transistors based on effective recombination speed method is presented, incorporating bandgap narrowing, carrier freezing-out and tunneling of holes through interface oxide. The modeling results based on the unified model are in good agreement with experimental data.
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Received: 06 January 1993
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