非有意掺杂LEC SI GaAs中EL2分布特性的研究

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Abstract The changes in the concentration and distribution of EL2 in undoped LEC SI GaAs caused by various annealing conditions were measured. The distribution of dislocation and precipitation of As were also measured for analyzing these changes. The origin of the inhomogeneity of EL2 distribution and the mechanism which improves the homogeneity of EL2 distribution by annealing are discussed on the basis of the experimental results.

Key words： EL2 Dislocation Precipitation of As GaAs concentration distribution

Received: 11 July 1993

PACS:

TN305.3

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	Yang Ruixia
	Fu Jun
	Li Guangping

Cite this article:

Yang Ruixia,Fu Jun,Li Guangping. STUDY ON DISTRIBUTION CHARACTERISTICS OF EL2 IN UNDOPED LEC SI GaAs[J]. , 1995, 17(1): 92-97 .

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http://jeit.ie.ac.cn/EN/ OR http://jeit.ie.ac.cn/EN/Y1995/V17/I1/92