电子辐照微氮直拉硅单晶的深能级的研究

Download: PDF (504 KB)
Export: BibTeX | EndNote (RIS)

Abstract The deep levels in electron irradiated CZ silicon single crystal grown in pure nitrogen protective atmosphere has been studied. It is pointed out that there is no measurable deep level related to nitrogen.

Key words： Electron irradiation Slightly N-doped silicon Deep level

Received: 03 December 1993

	Service

	E-mail this article
	Add to my bookshelf
	Add to citation manager
	E-mail Alert
	RSS
	Articles by authors





	Ding Koubao
	Zhang Xiumiao
	Shi Guohua
	Sun Qinsheng
	Shi Jianqing

Cite this article:

Ding Koubao,Zhang Xiumiao,Shi Guohua等. STUDY OF THE DEEP LEVELS IN ELECTRON IRRADIATED CZ-S1 SLIGHTLY DOPED WITH NITROGEN[J]. , 1995, 17(3): 334-336 .

URL:

http://jeit.ie.ac.cn/EN/ OR http://jeit.ie.ac.cn/EN/Y1995/V17/I3/334

[1]	Ding Koubao; Zhang Xiumiao. THE FIELD ENHANCED CARRIER GENERATION EFFECT OF DEEP LEVEL CENTERS[J]. , 1994, 16(1): 61-66 .