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| AN EXPERIMENTAL STUDY ON PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES |
| Guo Kaizhou①; Zhou Quan①; Ma Jun①;Yang Binzhou②; Zhao Wei② |
| ①Institute of Electronics, Academia Sinica, Beijing 100080;②State Key Laboratory of Transient Optics Technology, Xi'an Institute of Optics and Precission Mechanics, Xi'an 710068 |
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Abstract By using the apparatus given in this paper the experiment on photo-conductive switches was conducted to investigate the affection of both the laser energy and bias voltage on switch output. By means of the same set-up, the carrier lifetime of Cr: GaAs used was measured to be as 1.8ns, and the possibility of the set-up to be utilized as a high speed photodetector has been demonstrated.
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Received: 22 November 1993
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1995, Vol. 17 
